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Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices

Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices
Takashi Nakamura, Eishi Yahagi, Hideaki Kameyama, "Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices"
2008 | ISBN: 9812778810 | 368 pages | PDF | 14 MB


Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.


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This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.


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